The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 13, 2011
Filed:
Jul. 28, 2009
Takehito Shimatsu, Sendai, JP;
Hideo Sato, Sendai, JP;
Osamu Kitakami, Sendai, JP;
Satoshi Okamoto, Sendai, JP;
Hajime Aoi, Sendai, JP;
Hiroyasu Kataoka, Tokyo, JP;
Takehito Shimatsu, Sendai, JP;
Hideo Sato, Sendai, JP;
Osamu Kitakami, Sendai, JP;
Satoshi Okamoto, Sendai, JP;
Hajime Aoi, Sendai, JP;
Hiroyasu Kataoka, Tokyo, JP;
Tohoku University, , JP;
Fuji Electric Co., Ltd., , JP;
Abstract
Disclosed are a magnetic thin film capable of providing a high uniaxial magnetic anisotropy, Ku, while suppressing the saturation magnetization Ms thereof, and a method for forming the film; and also disclosed are various devices to which the magnetic thin film is applied. The magnetic thin film comprises a Co-M-Pt alloy having an L11-type ordered structure (wherein M represents one or more metal elements except Co and Pt). For example, the Co-M-Pt alloy is a Co—Ni—Pt alloy of which the composition comprises from 10 to 35 at. % of Co, from 20 to 55 at. % of Ni and a balance of Pt. The magnetic thin film is applicable to perpendicular magnetic recording media, tunnel magneto-resistance (TMR) devices, magnetoresistive random access memories (MRAM), microelectromechanical system (MEMS) devices, etc.