The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2011
Filed:
Oct. 06, 2009
Sung-nien Tang, Hsinchu County, TW;
Wei-lun Hsu, Hsin-Chu Hsien, TW;
Ching-ming Lee, Miaoli County, TW;
Te-yuan Wu, Hsin-Chu, TW;
Sung-Nien Tang, Hsinchu County, TW;
Wei-Lun Hsu, Hsin-Chu Hsien, TW;
Ching-Ming Lee, Miaoli County, TW;
Te-Yuan Wu, Hsin-Chu, TW;
United Microelectronics Corp., Science-Based Industrial Park, Hsin-Chu, TW;
Abstract
A semiconductor device includes a lateral double diffused metal oxide semiconductor (LDMOS) , a junction field effect transistor (JFET) and an inner circuit. The lateral double diffused metal oxide semiconductor includes a first source, a common drain and a first gate. The junction field effect transistor includes a second source, the common drain and a second gate. The second source is electrically connected to the first gate. The inner circuit is electrically connected to the first source.