The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 06, 2011
Filed:
Jul. 20, 2007
Alois Gutmann, Poughkeepsie, NY (US);
Sajan Marokkey, Wappingers Falls, NY (US);
Henning Haffner, Pawling, NY (US);
Chandrasekhar Sarma, Poughkeepsie, NY (US);
Haoren Zhuang, Hopewell Junction, NY (US);
Matthias Lipinski, Poughkeepsie, NY (US);
Alois Gutmann, Poughkeepsie, NY (US);
Sajan Marokkey, Wappingers Falls, NY (US);
Henning Haffner, Pawling, NY (US);
Chandrasekhar Sarma, Poughkeepsie, NY (US);
Haoren Zhuang, Hopewell Junction, NY (US);
Matthias Lipinski, Poughkeepsie, NY (US);
Infineon Technologies AG, Neubiberg, DE;
Abstract
Lithography masks and methods of manufacture thereof are disclosed. For example, a method of manufacturing a lithography mask includes forming a stack over a substrate. The stack includes bottom attenuated phase shift material layers, intermediate opaque material layers, and finally top resist layers. The method further includes patterning the stack and then trimming the resist layers to uncover a portion of the opaque material layers. The uncovered opaque material layers are subsequently etched followed by removal of any remaining resist layers.