The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 22, 2011

Filed:

Nov. 13, 2009
Applicants:

Changhyun Lee, Gyeonggi-do, KR;

Jungdal Choi, Seoul, KR;

Yoocheol Shin, Gyeonggi-do, KR;

Yongsik Yim, Gyeonggi-do, KR;

Inventors:

Changhyun Lee, Gyeonggi-do, KR;

Jungdal Choi, Seoul, KR;

Yoocheol Shin, Gyeonggi-do, KR;

Yongsik Yim, Gyeonggi-do, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01);
U.S. Cl.
CPC ...
Abstract

A nonvolatile memory device includes a word line group including a plurality of middle word lines and an edge word line having charge storage patterns on a substrate. A peripheral line is disposed on one side of the word line group so that the edge word line is between the peripheral word line and the middle word lines. The peripheral line includes an insulating layer and a gate electrode. Charge storage patterns of the middle and edge word lines are separated from each other, and a charge storage pattern of the edge word line extends on one side to be connected to the insulating layer of the peripheral line. Methods of forming nonvolatile memory devices are also disclosed.


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