The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2011
Filed:
Jul. 30, 2008
Mark D. Hall, Austin, TX (US);
Glenn C. Abeln, Buda, TX (US);
Chong-cheng Fu, Austin, TX (US);
Freescale Semiconductor, Inc., Austin, TX (US);
Abstract
A method of making a semiconductor device is achieved in and over a semiconductor layer. A trench is formed adjacent to a first active area. The trench is filled with insulating material. A masking feature is formed over a center portion of the trench to expose a first side of the trench between a first side of the masking feature and the first active area. A step of etching into the first side of the trench leaves a first recess in the trench. A first epitaxial region is grown in the first recess to extend the first active area to include the first recess and thereby form an extended first active region.