The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2011
Filed:
Dec. 10, 2007
Xiangdong Chen, Poughquag, NY (US);
Kenneth J. Stein, Sandy Hook, CT (US);
Thomas A. Wallner, Pleasant Valley, NY (US);
Xiangdong Chen, Poughquag, NY (US);
Kenneth J. Stein, Sandy Hook, CT (US);
Thomas A. Wallner, Pleasant Valley, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
An epitaxial layer of silicon (Si) or silicon-germanium (SiGe) extends over the edge of silicon trench isolation (STI), thereby increasing the effective width of an active silicon region (RX) bordered by the STI. The RX region may have a <100> crystal orientation. An effective width of an FET device formed in the RX region may be increased, therefore performance may be improved with same density. Isolation may not be degraded since RX-to-RX distance is same at bottom. Junction capacitance may be reduced since part of the RX is on STI.