The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2011
Filed:
Aug. 07, 2006
Kazuyoshi Inoue, Sodegaura, JP;
Koki Yano, Sodegaura, JP;
Nobuo Tanaka, Sodegaura, JP;
Tokie Tanaka, Legal Representative, Sodegaura, JP;
Kazuyoshi Inoue, Sodegaura, JP;
Koki Yano, Sodegaura, JP;
Nobuo Tanaka, Sodegaura, JP;
Tokie Tanaka, legal representative, Sodegaura, JP;
Idemitsu Kosan, Co., Ltd., Tokyo, JP;
Abstract
This invention provides a transparent oxide semiconductor, which comprises an oxide comprising indium oxide as a main component and cerium oxide as an additive and has such properties that light-derived malfunction does not occur, there is no variation in specific resistance of a thin film caused by heating and the like, and the mobility is high, and a process for producing the same. A semiconductor thin film characterized by comprising indium oxide and cerium oxide and being crystalline and having a specific resistance of 10to 10Ωcm is used. This semiconductor thin film has no significant change in specific resistance and has high mobility. Accordingly, an element having improved switching properties can be provided by constructing a switching element using this semiconductor thin film.