The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 22, 2011
Filed:
Sep. 07, 2005
Karl M. Brown, Mountain View, CA (US);
John Pipitone, Livermore, CA (US);
Vineet Mehta, Sunnyvale, CA (US);
Karl M. Brown, Mountain View, CA (US);
John Pipitone, Livermore, CA (US);
Vineet Mehta, Sunnyvale, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
A method of performing physical vapor deposition of copper onto an integrated circuit in a vacuum chamber of a plasma reactor, includes providing a copper target near a ceiling of the chamber, placing an integrated circuit wafer on a wafer support pedestal facing the target, introducing a carrier gas into the vacuum chamber, and establishing a deposition rate on the wafer by applying D.C. power to the copper target while establishing a plasma ionization fraction by applying VHF power to the copper target. The method can further include promoting re-sputtering of copper on vertical surfaces on the wafer by coupling HF or LF power to the wafer. The method preferably includes maintaining a target magnetic field at the target and scanning the target magnetic field across the target.