The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2011
Filed:
Dec. 01, 2008
Bin LI, Chantilly, VA (US);
Adam Matthew Bumgarner, Duluth, GA (US);
Daniel Pirkl, Centreville, VA (US);
George Michael, High Point, NC (US);
Bin Li, Chantilly, VA (US);
Adam Matthew Bumgarner, Duluth, GA (US);
Daniel Pirkl, Centreville, VA (US);
George Michael, High Point, NC (US);
BAE Systems Information and Electronic Systems Integration Inc., Nashua, NH (US);
Ovonyx, Inc., Rochester Hills, MI (US);
Abstract
An adjustable write pulse generator is disclosed. The adjustable write pulse generator includes a band-gap reference current, a programmable ring oscillator, a frequency divider and a single pulse generator. The band-gap reference current circuit generates a well-compensated current over a predetermined range of temperatures needed to program a chalcogenide memory cell. The programmable ring oscillator generates a first set of continuous write '0' and write '1' pulse signals based on the well-compensated current. The frequency divider then divides the first set of continuous write “0” and write “1” pulse signals into a second set of continuous write “0” and write “1” pulse signals. The single pulse generator subsequently converts the second set of continuous write “0” and write “1” pulse signals into a single write “0” pulse signal or a single write “1” pulse signal when programming the chalcogenide memory cell.