The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 15, 2011

Filed:

Feb. 08, 2010
Applicants:

Kuo-ji Chen, Taipei, TW;

Guang-cheng Wang, Zhubei, TW;

Inventors:

Kuo-Ji Chen, Taipei, TW;

Guang-Cheng Wang, Zhubei, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H02H 9/00 (2006.01); H01C 7/12 (2006.01); H02H 1/00 (2006.01); H02H 1/04 (2006.01); H02H 3/22 (2006.01);
U.S. Cl.
CPC ...
Abstract

An electrostatic discharge (ESD) clamp includes a first power source configured to provide a first power supply voltage, a power supply node coupled to the first power source and receiving the power supply voltage; and a first NMOS transistor and a second NMOS transistor coupled in series and between the power supply node and a VSS node. The first NMOS transistor and the second NMOS transistor are low nominal VDD devices with maximum endurable voltages lower than the power supply voltage. The ESD claim further includes an ESD detection circuit including a capacitor coupled between the power supply node and a gate of the second NMOS transistor, and a resistor coupled between the gate of the second NMOS transistor and the VSS node.


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