The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2011
Filed:
Apr. 05, 2010
Keum-joo Lee, Hwaseong-si, KR;
Bo-wo Choi, Seoul, KR;
In-seak Hwang, Suwon-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
A method of fabricating a semiconductor device includes forming a mask pattern on an active region of a substrate defined by an isolation region. The mask pattern includes an opening therein exposing a portion of the active region. The exposed portion of the active region is etched to define a preliminary gate trench therein including opposing sidewalls and a surface therebetween, where portions of the mask pattern extend to edges of the active region outside the preliminary gate trench. An annealing process is performed on the substrate to form a gate trench from the preliminary gate trench, and gate electrode is formed in the gate trench. The preliminary gate trench and the gate trench have a substantially similar width defined between the edges of the active region including the portions of the mask pattern thereon.