The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 15, 2011
Filed:
Mar. 11, 2009
Applicant:
Lianzhong Yu, Redmond, WA (US);
Inventor:
Lianzhong Yu, Redmond, WA (US);
Assignee:
Honeywell International Inc., Morristown, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C03C 15/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods for creating at least one micro-electromechanical (MEMS) structure in a silicon-on-insulator (SOI) wafer. The SOI wafer with an extra layer of oxide is etched according to a predefined pattern. A layer of oxide is deposited over exposed surfaces. An etchant selectively removes the oxide to expose the SOI wafer substrate. A portion of the SOI substrate under at least one MEMS structure is removed, thereby releasing the MEMS structure to be used in the formation of an accelerometer.