The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2011
Filed:
Jun. 11, 2008
Rachel Gordin, Hadera, IL;
David Goren, Nesher, IL;
Rachel Gordin, Hadera, IL;
David Goren, Nesher, IL;
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method of modeling capacitance for a structure comprising a pair of long conductors surrounded by a dielectric material and supported by a substrate. In particular, the structure may be on-chip coplanar transmission lines over a conductive substrate operated at very high frequencies, such that the substrate behaves as a perfect dielectric. It is assumed that the surrounding dielectric material is a first dielectric with a first permittivity (∈) and the substrate is a second dielectric with a second permittivity (∈). The method models the capacitance (C) for values of the first and second permittivity (∈, ∈) based on known capacitance (C) computed for a basis structure with the same first permittivity (∈) and a different second permittivity (∈). Extrapolation or interpolation formulae are suggested to model the sought capacitance (C) through one or more known capacitances (C).