The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2011
Filed:
Jul. 06, 2010
Yeur-luen Tu, Taichung, TW;
Chia-shiung Tsai, Hsin-Chu, TW;
Ching-chun Wang, Tainan, TW;
Ren-jie Lin, Tainan, TW;
Shou-gwo Wuu, Hsin-Chu, TW;
Yeur-Luen Tu, Taichung, TW;
Chia-Shiung Tsai, Hsin-Chu, TW;
Ching-Chun Wang, Tainan, TW;
Ren-Jie Lin, Tainan, TW;
Shou-Gwo Wuu, Hsin-Chu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
The present disclosure provides methods and apparatus for reducing dark current in a backside illuminated semiconductor device. In one embodiment, a method of fabricating a semiconductor device includes providing a substrate having a frontside surface and a backside surface, and forming a plurality of sensor elements in the substrate, each of the plurality of sensor elements configured to receive light directed towards the backside surface. The method further includes forming a dielectric layer on the backside surface of the substrate, wherein the dielectric layer has a compressive stress to induce a tensile stress in the substrate. A backside illuminated semiconductor device fabricated by such a method is also disclosed.