The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2011
Filed:
Jun. 26, 2008
Xiaomeng Chen, Poughkeepsie, NY (US);
Byeong Yeol Kim, Lagrangeville, NY (US);
Mahender Kumar, Fishkill, NY (US);
Huilong Zhu, Poughkeepsie, NY (US);
Xiaomeng Chen, Poughkeepsie, NY (US);
Byeong Yeol Kim, Lagrangeville, NY (US);
Mahender Kumar, Fishkill, NY (US);
Huilong Zhu, Poughkeepsie, NY (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A semiconductor structure, a fabrication method, and a design structure for a FinFet. The FinFet includes a dielectric layer, a central semiconductor fin region on the dielectric layer, a first semiconductor seed region on the dielectric layer, and a first strain creating fin region. The first semiconductor seed region is sandwiched between the first strain creating fin region and the dielectric layer. The first semiconductor seed region includes a first semiconductor material. The first strain creating fin region includes the first semiconductor material and a second semiconductor material different than the first semiconductor material. A first atom percent of the first semiconductor material in the first semiconductor seed region is different than a second atom percent of the first semiconductor material in the first strain creating fin region.