The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2011
Filed:
Apr. 29, 2009
Heon Yong Chang, Suwon-si, KR;
Heon Yong Chang, Suwon-si, KR;
Hynix Semiconductor Inc., Gyeonggi-do, KR;
Abstract
A phase change memory device includes a silicon substrate having a cell region and a peripheral region. A first insulation layer is formed in the cell region and includes a plurality of holes. Cell switching elements are formed in the holes of the first insulation layer and heat sinks are formed on the cell switching elements. The heaters are formed on the center of the heat sinks and spacers are formed on the sidewalls. A gate is formed in the peripheral region of the silicon substrate formed of a gate insulation layer, a first conductive layer, a second conductive layer, and a hard mask layer. A second insulation layer covers the entire surface of the resultant silicon substrate and exposes the spacers and the heaters and the hard mask layer. Finally, a stack pattern of a phase change layer and a top electrode is formed on the heaters.