The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 08, 2011

Filed:

Nov. 24, 2010
Applicants:

Kang-uk Kim, Seoul, KR;

Yongchul OH, Suwon-si, KR;

Hui-jung Kim, Seongnam-si, KR;

Hyun-woo Chung, Seoul, KR;

Hyun-gi Kim, Hwaseong-si, KR;

Inventors:

Kang-Uk Kim, Seoul, KR;

Yongchul Oh, Suwon-si, KR;

Hui-Jung Kim, Seongnam-si, KR;

Hyun-Woo Chung, Seoul, KR;

Hyun-Gi Kim, Hwaseong-si, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01);
U.S. Cl.
CPC ...
Abstract

A method of fabricating a vertical channel transistor includes: forming a line type active pattern on a substrate so as to extend in a first horizontal direction; forming a vertical channel isolating the active pattern in a second horizontal direction intersecting the first horizontal direction and extending vertically on the substrate; forming a buried bit line extending in the first horizontal direction on the substrate; and forming a word line extending in the second horizontal direction along at least one side surface of the vertical channel.


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