The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2011
Filed:
Oct. 16, 2009
Sung-shan Tai, San Jose, CA (US);
Yong-zhong HU, Cupertino, CA (US);
François Hébert, San Mateo, CA (US);
Hong Chang, Cupertino, CA (US);
Mengyu Pan, Shanghai, CN;
Yingying Lou, Shanghai, CN;
Yu Wang, Fremont, CA (US);
Sung-Shan Tai, San Jose, CA (US);
Yong-Zhong Hu, Cupertino, CA (US);
François Hébert, San Mateo, CA (US);
Hong Chang, Cupertino, CA (US);
Mengyu Pan, Shanghai, CN;
Yingying Lou, Shanghai, CN;
Yu Wang, Fremont, CA (US);
Abstract
This invention discloses a method of manufacturing a trenched semiconductor power device with split gate filling a trench opened in a semiconductor substrate wherein the split gate is separated by an inter-poly insulation layer disposed between a top and a bottom gate segments. The method further includes a step of forming the inter-poly layer by applying a RTP process after a HDP oxide deposition process to bring an etch rate of the HDP oxide layer close to an etch rate of a thermal oxide.