The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 08, 2011
Filed:
Sep. 12, 2005
Joseph John Sumakeris, Apex, NC (US);
Michael James Paisley, Garner, NC (US);
Michael John O'loughlin, Chapel Hill, NC (US);
Joseph John Sumakeris, Apex, NC (US);
Michael James Paisley, Garner, NC (US);
Michael John O'Loughlin, Chapel Hill, NC (US);
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
A method for locally controlling the stoichiometry of an epitaxially deposited layer on a semiconductor substrate is provided. The method includes directing a first reactant gas and a doping gas across a top surface of a semiconductor substrate and directing a drive gas and a second reactant gas against the substrate separately from the first reactant gas in a manner that rotates the substrate while introducing the second reactant gas at an edge of the substrate to control each reactant separately, thereby compensating and controlling depletion effects and improving doping uniformity in resulting epitaxial layers on the substrate.