The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2011
Filed:
Mar. 03, 2008
Jong-an Kim, Seoul, KR;
Yu-sin Yang, Seoul, KR;
Chung-sam Jun, Suwon-si, KR;
Moon-shik Kang, Yongin-si, KR;
Ji-hye Kim, Anyang-si, KR;
Jong-An Kim, Seoul, KR;
Yu-Sin Yang, Seoul, KR;
Chung-Sam Jun, Suwon-si, KR;
Moon-Shik Kang, Yongin-si, KR;
Ji-Hye Kim, Anyang-si, KR;
Samsung Electronics Co., Ltd., Suwon-Si, KR;
Abstract
In a method of analyzing a wafer sample, a first defect of a photoresist pattern on the wafer sample having shot regions exposed with related exposure conditions is detected. A first portion of the pattern includes the shot regions exposed with an exposure condition corresponding to a reference exposure condition and a tolerance error range of the reference exposure condition. The first defect repeatedly existing in at least two of the shot regions in a second portion of the pattern is set up as a second defect of the pattern. A first reference image displaying the second defect is obtained. The first defect of the shot regions in the first portion corresponding to the second defect is set up as a third defect corresponding to weak points of the pattern. The exposure conditions of the shot region having no weak points are set up as an exposure margin of an exposure process.