The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 01, 2011

Filed:

Sep. 22, 2009
Applicants:

Satish K. Damaraju, El Dorado Hills, CA (US);

AK R. Ahmed, Rancho Cordova, CA (US);

Scott E. Siers, Elk Grove, CA (US);

Inventors:

Satish K. Damaraju, El Dorado Hills, CA (US);

Ak R. Ahmed, Rancho Cordova, CA (US);

Scott E. Siers, Elk Grove, CA (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Embodiments of a memory cell comprising a voltage module configured to supply a first supply voltage and a second supply voltage, a data node programming module configured to receive the first supply voltage and to program a data node based at least in part on a write data line, and a complementary data node programming module configured to receive the second supply voltage and to program a complementary data node based at least in part on a complementary write data line, wherein the voltage module is configured such that the first supply voltage is substantially different from the second supply voltage for a period of time while the memory device is being programmed. Additional variants and embodiments may also be disclosed and claimed.


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