The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2011
Filed:
May. 01, 2008
Tang-kuei Tseng, Jhudong Township, Hsinchu County, TW;
Che-hao Chuang, Hsinchu, TW;
Ryan Hsin-chin Jiang, Taipei, TW;
Ming-dou Ker, Jhu-bei, TW;
Tang-Kuei Tseng, Jhudong Township, Hsinchu County, TW;
Che-Hao Chuang, Hsinchu, TW;
Ryan Hsin-Chin Jiang, Taipei, TW;
Ming-Dou Ker, Jhu-bei, TW;
Amazing Microelectronic Corp., Taipei County, TW;
Abstract
The present invention discloses an asymmetric bidirectional silicon-controlled rectifier, which comprises: a second conduction type substrate; a first conduction type undoped epitaxial layer formed on the substrate; a first well and a second well both formed inside the undoped epitaxial layer and separated by a portion of the undoped epitaxial layer; a first buried layer formed in a junction between the first well and the substrate; a second buried layer formed in a junction between the second well and the substrate; a first and a second semiconductor area with opposite conduction type both formed inside the first well; a third and a fourth semiconductor area with opposite conduction type both formed inside the second well, wherein the first and second semiconductor areas are connected to the anode of the silicon-controlled rectifier, and the third and fourth semiconductor areas are connected to the cathode of the silicon-controlled rectifier.