The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 01, 2011

Filed:

Sep. 05, 2008
Applicants:

Ming Chyi Liu, Hsinchu, TW;

Yao Fei Chuang, Tainan, TW;

Martin Liu, Yonghe, TW;

Gwo-yuh Shiau, Hsinchu, TW;

Chia-shiung Tsai, Hsin-Chu, TW;

Inventors:

Ming Chyi Liu, Hsinchu, TW;

Yao Fei Chuang, Tainan, TW;

Martin Liu, Yonghe, TW;

Gwo-Yuh Shiau, Hsinchu, TW;

Chia-Shiung Tsai, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/302 (2006.01); H01L 21/461 (2006.01);
U.S. Cl.
CPC ...
Abstract

Provided is a method for fabricating a semiconductor device that includes providing a semiconductor substrate having a front side and a backside, where active or passive devices are formed in the front side, rotating the semiconductor substrate, and etching the backside of the semiconductor substrate by introducing a first etchant while the substrate is rotated, the first etchant including an R—COOH.


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