The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2011
Filed:
Jul. 23, 2008
Tomokazu Yokoi, Kanagawa, JP;
Atsuo Isobe, Kanagawa, JP;
Motomu Kurata, Kanagawa, JP;
Takeshi Shichi, Kanagawa, JP;
Daisuke Ohgarane, Kanagawa, JP;
Takashi Shingu, Kanagawa, JP;
Tomokazu Yokoi, Kanagawa, JP;
Atsuo Isobe, Kanagawa, JP;
Motomu Kurata, Kanagawa, JP;
Takeshi Shichi, Kanagawa, JP;
Daisuke Ohgarane, Kanagawa, JP;
Takashi Shingu, Kanagawa, JP;
Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken, JP;
Abstract
A method for manufacturing a semiconductor device, by which a bottom gate thin film transistor that has an improved S value and a channel forming region with a smaller thickness than that of a source region and a drain region can be manufactured in a simple process. An island-like conductive film is formed over a surface of an insulating substrate in a portion corresponding to a channel forming region, and is covered with an insulating film to form a projection portion. After an amorphous semiconductor film is deposited to cover the projection portion, the amorphous semiconductor film is irradiated with laser light so as to be melted and crystallized. Part of the melted semiconductor over the projection portion flows into regions adjacent to both sides of the projection portion, which results in reduction in thickness of the semiconductor film over the projection portion (channel forming region).