The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 01, 2011
Filed:
Nov. 02, 2010
Applicants:
Min-cheng Chen, Hsinchu, TW;
Hou-yu Chen, Hsinchu, TW;
Chia-yi Lin, Hsinchu, TW;
Inventors:
Assignee:
National Applied Research Laboratories, Hsinchu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/336 (2006.01); H01L 21/8238 (2006.01); H01L 21/8236 (2006.01);
U.S. Cl.
CPC ...
Abstract
The present disclosure fabricates an embedded metal-oxide-nitride-oxide-silicon (MONOS) memory device. The memory device is stacked with memory layers having a low aspect ratio. The memory device can be easily fabricated with only two extra masks for saving cost. The present disclosure uses a general method for mass-producing TFT and is thus fit for fabricating NAND-type or NOR-type flash memory to be used as embedded memory in a system-on-chip.