The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2011
Filed:
Jan. 07, 2008
Soo-han Choi, Seoul, KR;
Yong-jin Chun, Daejeon, KR;
Moon-hyun Yoo, Suwon-si, KR;
Joon-ho Choi, Suwon-si, KR;
Ji-suk Hong, Hwaseong-si, KR;
Soo-han Choi, Seoul, KR;
Yong-jin Chun, Daejeon, KR;
Moon-hyun Yoo, Suwon-si, KR;
Joon-ho Choi, Suwon-si, KR;
Ji-suk Hong, Hwaseong-si, KR;
Abstract
Provided are a system for analyzing a mask topography, which can reduce calculation time and increase calculation accuracy in consideration of a mask topography effect, and a method of forming an image using the system. The system and method simultaneously obtains a first electric field using a Kirchhoff method without considering a pitch formed on a mask and obtains a second electric field using an electromagnetic field analysis method considering the pitch, and then determines a third electric field on a pupil surface of a projection lens by combining the first electric field and the second electric field of forming an image, so as to calculate the image of an optical lithography system which includes an illumination system and a projection optical system and to which the projection lens belongs.