The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8044402 B1

PDF
Full Text
Expired
Date of Patent:
Oct. 25, 2011

Filed:

Feb. 02, 2008
Applicants:

Hisato Yabuta, Machida, JP;

Nobuyuki Kaji, Kawasaki, JP;

Ryo Hayashi, Yokohama, JP;

Inventors:

Hisato Yabuta, Machida, JP;

Nobuyuki Kaji, Kawasaki, JP;

Ryo Hayashi, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/49 (2006.01);
U.S. Cl.
CPC ...
Abstract

An amorphous insulator film is provided which is composed of silicon (Si) oxide, in which the amorphous insulator film includes Ar and an amount of Ar included therein is equal to or larger than 3 at. % in terms of atomic ratio with respect to Si.


Find Patent Forward Citations

Yabuta, Hisato. (2011). Amorphous insulator film and thin-film transistor (U.S. Patent No. 8044402). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8044402

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