The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2011
Filed:
Jul. 21, 2009
Jonathan W. Ward, Fairfax, VA (US);
Benjamin Schlatka, Boston, MA (US);
Mitchell Meinhold, Arlington, MA (US);
Robert F. Smith, Odessa, FL (US);
Brent M. Segal, Woburn, MA (US);
Jonathan W. Ward, Fairfax, VA (US);
Benjamin Schlatka, Boston, MA (US);
Mitchell Meinhold, Arlington, MA (US);
Robert F. Smith, Odessa, FL (US);
Brent M. Segal, Woburn, MA (US);
Nantero, Inc., Woburn, MA (US);
Abstract
Manufacturers encounter limitations in forming low resistance ohmic electrical contact to semiconductor material P-type Gallium Nitride (p-GaN), commonly used in photonic applications, such that the contact is highly transparent to the light emission of the device. Carbon nanotubes (CNTs) can address this problem due to their combined metallic and semiconducting characteristics in conjunction with the fact that a fabric of CNTs has high optical transparency. The physical structure of the contact scheme is broken down into three components, a) the GaN, b) an interface material and c) the metallic conductor. The role of the interface material is to make suitable contact to both the GaN and the metal so that the GaN, in turn, will make good electrical contact to the metallic conductor that interfaces the device to external circuitry. A method of fabricating contact to GaN using CNTs and metal while maintaining protection of the GaN surface is provided.