The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2011
Filed:
Apr. 19, 2010
Applicants:
Kai MA, Palo Alto, CA (US);
Yoshitaka Yokota, San Jose, CA (US);
Christopher S. Olsen, Fremont, CA (US);
Inventors:
Kai Ma, Palo Alto, CA (US);
Yoshitaka Yokota, San Jose, CA (US);
Christopher S. Olsen, Fremont, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/461 (2006.01); H01L 21/302 (2006.01); H01L 21/469 (2006.01); H01L 21/31 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods and apparatus for forming an oxide layer on a semiconductor substrate are disclosed. A two frequency plasma source is used to form a plasma in a plasma reactor. In various embodiments, different quantities of power are supplied to a power source operating at the first frequency and a power source operating at the second frequency over time.