The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 25, 2011
Filed:
Jan. 10, 2008
David J. Keller, Boise, ID (US);
David J. Keller, Boise, ID (US);
Micron Technology, Inc., Boise, ID (US);
Abstract
The invention includes methods of forming semiconductor constructions in which a single etch is utilized to penetrate through a titanium-containing layer and partially into a silicon-containing layer beneath the titanium-containing layer. The etch can utilize CHF. The silicon-containing layer can contain an n-type doped region and a p-type doped region. In some methods, the silicon-containing layer can contain an n-type doped region laterally adjacent a p-type doped region, and the processing can be utilized to form a transistor gate containing n-type doped silicon simultaneously with the formation of a transistor gate containing p-type doped silicon.