The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2011
Filed:
May. 27, 2010
Hironobu Miya, Toyama, JP;
Kazuyuki Toyoda, Toyama, JP;
Norikazu Mizuno, Toyama, JP;
Taketoshi Sato, Toyama, JP;
Masanori Sakai, Toyama, JP;
Masayuki Asai, Toyama, JP;
Kazuyuki Okuda, Toyama, JP;
Hideki Horita, Toyama, JP;
Hironobu Miya, Toyama, JP;
Kazuyuki Toyoda, Toyama, JP;
Norikazu Mizuno, Toyama, JP;
Taketoshi Sato, Toyama, JP;
Masanori Sakai, Toyama, JP;
Masayuki Asai, Toyama, JP;
Kazuyuki Okuda, Toyama, JP;
Hideki Horita, Toyama, JP;
Hitachi Kokusai Electric Inc., Tokyo, JP;
Abstract
A production method for a semiconductor device comprising the first step of supplying a first reaction material to a substrate housed in a processing chamber to subject to a ligand substitution reaction a ligand as a reaction site existing on the surface of the substrate and the ligand of the first reaction material, the second step of removing the excessive first reaction material from the processing chamber, the third step of supplying a second reaction material to the substrate to subject a ligand substituted by the first step to a ligand substitution reaction with respect to a reaction site, the fourth step of removing the excessive second reaction material from the processing chamber, and a fifth step of supplying a third reaction material excited by plasma to the substrate to subject a ligand, not subjected to a substitution reaction with respect to a reaction site in the third step, to a ligand substitution reaction with respect to a reaction site, wherein the steps 1-5 are repeated a specified number of times until a film of a desired thickness is formed on the substrate surface.