The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2011
Filed:
Jun. 03, 2009
Chiung-han Yeh, Tainan, TW;
Chen-pin Hsu, Taoyuan, TW;
Ming-yuan Wu, Hsinchu, TW;
Kong-beng Thei, Hsinchu Country, TW;
Harry Chuang, Hsinchu, TW;
Chiung-Han Yeh, Tainan, TW;
Chen-Pin Hsu, Taoyuan, TW;
Ming-Yuan Wu, Hsinchu, TW;
Kong-Beng Thei, Hsinchu Country, TW;
Harry Chuang, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Abstract
A method is provided for fabricating a semiconductor device. The method includes providing a substrate including a dummy gate structure formed thereon, removing the dummy gate structure to form a trench, forming a first metal layer over the substrate to fill a portion of the trench, forming a protection layer in a remaining portion of the trench, removing a unprotected portion of the first metal layer, removing the protection layer from the trench, and forming a second metal layer over the substrate to fill the trench.