The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2011
Filed:
Nov. 24, 2010
Han-jin Lim, Seoul, KR;
Jae-hong Seo, Yongin-si, KR;
Seok-woo Nam, Seongnam-si, KR;
Bong-hyun Kim, Incheon, KR;
Taek-soo Jeon, Yongin-si, KR;
Han-Jin Lim, Seoul, KR;
Jae-Hong Seo, Yongin-si, KR;
Seok-Woo Nam, Seongnam-si, KR;
Bong-Hyun Kim, Incheon, KR;
Taek-Soo Jeon, Yongin-si, KR;
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Abstract
In a method of forming a capacitor, a seed stopper and a sacrificial layer is formed on an insulating interlayer having a plug therethrough. An opening is formed through the sacrificial layer and the seed stopper to expose the plug. A seed is formed on an innerwall of the opening. A lower electrode is formed covering the seed on the innerwall of the opening. The sacrificial layer and the seed are removed. A dielectric layer and an upper electrode are sequentially formed on the lower electrode.