The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2011
Filed:
Feb. 08, 2008
Applicants:
Jen-chieh Shih, Jhubei, TW;
Hsiao-wei Yeh, Hsinchu County, TW;
Inventors:
Jen-Chieh Shih, Jhubei, TW;
Hsiao-Wei Yeh, Hsinchu County, TW;
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/00 (2006.01); G03F 7/004 (2006.01); G03F 7/26 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
Abstract
A method of lithography patterning includes forming a resist pattern on a substrate, the resist pattern including at least one desired opening and at least one padding opening therein on the substrate; forming a patterned photosensitive material layer on the resist pattern and the substrate, wherein the patterned photosensitive material layer covers the padding opening of the resist pattern; and applying a resolution enhancement lithography by assist of chemical shrink (RELACS) process to the desired opening of the resist pattern.