The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2011
Filed:
Jul. 20, 2006
Nobuaki Ito, Futtsu, JP;
Kensuke Okazawa, Futtsu, JP;
Shinji Tokumaru, Futtsu, JP;
Masaki Okajima, Tokyo, JP;
Nobuaki Ito, Futtsu, JP;
Kensuke Okazawa, Futtsu, JP;
Shinji Tokumaru, Futtsu, JP;
Masaki Okajima, Tokyo, JP;
Nippon Steel Materials Co., Ltd., Tokyo, JP;
Abstract
The present invention provides a high purity silicon production system and production method suitable for using inexpensive metallurgical grade metal silicon as a material and using the slag refining method to produce high purity silicon with a purity of 6N or more suitable for solar battery applications, in particular, high purity silicon with a boron content of at least not more than 0.3 mass ppm, inexpensively on an industrial scale, that is, a high purity silicon production system and production method using the slag refining method wherein a direct electromagnetic induction heating means having the function of directly heating the molten silicon in the crucible by electromagnetic induction is arranged outside the outside wall surface of the above crucible and the crucible is formed by an oxidation resistant material at least at a region where the molten silicon contacts the crucible inside wall surface at the time of not powering the direct electromagnetic induction heating means.