Quantitative evaluation device and method of atomic vacancy existing in silicon wafer

Abstract

There is provided a quantitative evaluation device or the like of atomic vacancy existing in a silicon wafer in which the atomic vacancy concentration in the silicon wafer can be quantitatively evaluated by forming a rationalized thin-film transducer on a surface of a silicon sample without conducting an acceleration treatment for enhancing the concentration. This is characterized by comprising a magnetic force generating meansfor applying an external magnetic field to a silicon samplecut out from a given site of a silicon wafer, a temperature controlling meanscapable of cooling the silicon sampleto a temperature region of not higher than 50 K, a ultrasonic oscillating-detecting meansfor oscillating ultrasonic pulse to the surface of the silicon sampleand propagating the oscillated ultrasonic pulse into the silicon sampleand detecting a change of sound velocity in the propagated ultrasonic pulse, wherein a thin-film transducerhaving properties capable of following to an expansion of the silicon sampleat the above temperature region and substantially aligning C-axis in a given direction is directly formed on the surface of the silicon sample