The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2011
Filed:
Aug. 23, 2010
Shih-hsien Wu, Taoyuan County, TW;
Shinn-juh Lai, Hsinchu County, TW;
Min-lin Lee, Hsinchu, TW;
Shur-fen Liu, Hsinchu County, TW;
Shih-Hsien Wu, Taoyuan County, TW;
Shinn-Juh Lai, Hsinchu County, TW;
Min-Lin Lee, Hsinchu, TW;
Shur-Fen Liu, Hsinchu County, TW;
Industrial Technology Research Institute, Chutung, Hsinchu, TW;
Abstract
A capacitor device with a capacitance is introduced. The capacitor device includes at least one capacitive element. The at least capacitive element comprises a pair of first conductive layers being opposed to each other, at least one first dielectric layer formed on a surface of at least one of the first conductive layers, and a second dielectric layer being sandwiched between the first conductive layers. The first dielectric layer has a first dielectric constant and the second dielectric layer has a second dielectric constant. The capacitance of the capacitor device depends on dielectric parameters of the first dielectric layer and the second dielectric layer. The dielectric parameters comprise the first dielectric constant and thickness of the at least one first dielectric layer and the second dielectric constant and thickness of the second dielectric layer.