The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2011
Filed:
Dec. 23, 2008
Kwan-woo DO, Icheon-si, KR;
Kee-jeung Lee, Icheon-si, KR;
Deok-sin Kil, Icheon-si, KR;
Young-dae Kim, Icheon-si, KR;
Jin-hyock Kim, Icheon-si, KR;
Kyung-woong Park, Icheon-si, KR;
Jeong-yeop Lee, Icheon-si, KR;
Kwan-Woo Do, Icheon-si, KR;
Kee-Jeung Lee, Icheon-si, KR;
Deok-Sin Kil, Icheon-si, KR;
Young-Dae Kim, Icheon-si, KR;
Jin-Hyock Kim, Icheon-si, KR;
Kyung-Woong Park, Icheon-si, KR;
Jeong-Yeop Lee, Icheon-si, KR;
Hynix Semiconductor Inc., Icheon-si, Gyeonggi-do, KR;
Abstract
A capacitor includes a bottom electrode, a dielectric layer and a top electrode over a substrate. A RuTiOfilm is included in at least one of the bottom and top electrodes, where x, y and z are positive real numbers. A method of fabricating the capacitor through a sequential formation of a bottom electrode, a dielectric layer and a top electrode over a substrate includes forming a RuTiOfilm during a formation of at least one of the bottom electrode and top electrode, where x, y and z are positive real numbers.