The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 11, 2011
Filed:
Dec. 22, 2005
Applicants:
Chia-tien Peng, Hsinchu Hsien, TW;
Chih-hsiung Chang, Taichung Hsien, TW;
Inventors:
Chia-Tien Peng, Hsinchu Hsien, TW;
Chih-Hsiung Chang, Taichung Hsien, TW;
Assignee:
Au Optronics Corp., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/84 (2006.01);
U.S. Cl.
CPC ...
Abstract
A crystallizing method for forming a poly-Si film is described as follows. First, forming an activated layer on a substrate, and the molecule structure of the activated layer includes carbon, hydrogen, oxygen and silicon. And then, forming an amorphous silicon film on the activated layer. Finally, performing an annealing process to crystallize the amorphous silicon film and transform it into a poly-Si film.
Peng, Chia-Tien. (2011). Polysilicon film, thin film transistor using the same, and method for forming the same (U.S. Patent No. 8034671). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8034671
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile