The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2011

Filed:

Sep. 08, 2008
Applicant:

Yoshiyuki Suda, Koganei, JP;

Inventor:

Yoshiyuki Suda, Koganei, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 31/0312 (2006.01);
U.S. Cl.
CPC ...
Abstract

There is offered a switching resistance RAM that is very much reduced in an occupied area and is highly integrated. Memory cells CEL-CELare formed corresponding to four intersections of word lines WLand WLand bit lines BLand BL. Each of the memory cells CEL-CELare composed of a switching layerformed on a surface of an N+ type Si layer. The switching layeris electrically connected to the bit line BLor BLthereabove through an electrode. The switching layeris composed of a SiC layerA stacked on the surface of the N+ type Si layerand a Si oxide layerB stacked on the SiC layerA. A top surface of the Si oxide layerB, that is the uppermost layer of the switching layer, is electrically connected to the corresponding bit line BLor BL


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