The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2011
Filed:
Feb. 13, 2009
Yasunobu Saito, Tokyo, JP;
Wataru Saito, Kanagawa-ken, JP;
Yorito Kakiuchi, Kanagawa-ken, JP;
Tomohiro Nitta, Kanagawa-ken, JP;
Akira Yoshioka, Kanagawa-ken, JP;
Tetsuya Ohno, Kanagawa-ken, JP;
Hidetoshi Fujimoto, Kanagawa-ken, JP;
Takao Noda, Kanagawa-ken, JP;
Yasunobu Saito, Tokyo, JP;
Wataru Saito, Kanagawa-ken, JP;
Yorito Kakiuchi, Kanagawa-ken, JP;
Tomohiro Nitta, Kanagawa-ken, JP;
Akira Yoshioka, Kanagawa-ken, JP;
Tetsuya Ohno, Kanagawa-ken, JP;
Hidetoshi Fujimoto, Kanagawa-ken, JP;
Takao Noda, Kanagawa-ken, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Abstract
A semiconductor device includes: a first semiconductor layer including AlGaN (0≦X≦1); a second semiconductor layer provided on the first semiconductor layer, including AlGaN (0≦Y≦1, X<Y), and having a larger bandgap than the first semiconductor layer; a source electrode provided on the second semiconductor layer; a drain electrode provided on the second semiconductor layer; and a gate electrode provided on the second semiconductor layer between the source electrode and the drain electrode. A region of the second semiconductor layer below the gate electrode at a depth short of the first semiconductor layer is doped with atoms to be negatively charged in the second semiconductor layer.