The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2011
Filed:
Mar. 13, 2008
Robert D. Allen, San Jose, CA (US);
Phillip Joe Brock, Sunnyvale, CA (US);
Blake W. Davis, Hollister, CA (US);
Qinghuang Lin, Yorktown Heights, NY (US);
Robert D. Miller, San Jose, CA (US);
Alshakim Nelson, Fremont, CA (US);
Ratnam Sooriyakumaran, San Jose, CA (US);
Robert D. Allen, San Jose, CA (US);
Phillip Joe Brock, Sunnyvale, CA (US);
Blake W. Davis, Hollister, CA (US);
Qinghuang Lin, Yorktown Heights, NY (US);
Robert D. Miller, San Jose, CA (US);
Alshakim Nelson, Fremont, CA (US);
Ratnam Sooriyakumaran, San Jose, CA (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Compositions, a method, and a photopatternable blend. The compositions include a blend of a first and a second polymer. The first polymer is a substituted silsesquioxane copolymer. The second polymer is a substituted silsesquioxane polymer. The second polymer is configured to undergo chemical crosslinking with the first polymer, the second polymer, or a combination thereof, upon exposure to light, thermal energy, or a combination thereof. The compositions include a photosensitive acid generator. The method includes forming a film. The film is patternwise imaged, and at least one region is exposed to radiation. After the imaging, the film is baked, wherein at least one exposed region is rendered substantially soluble. After the baking, the film is developed, wherein a relief pattern remains. The relief pattern is exposed to radiation. The relief pattern is baked. The relief pattern is cured. A chemically amplified positive-tone photopatternable blend is also described.