The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2011
Filed:
May. 14, 2007
Applicants:
Hsiao-wei Yeh, Hsinchu, TW;
Jen-chieh Shih, Jhubei, TW;
Jian-hong Chen, Hsin-Chu, TW;
Inventors:
Assignee:
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G03F 7/039 (2006.01); G03F 7/038 (2006.01); G03F 7/11 (2006.01); G03C 1/73 (2006.01);
U.S. Cl.
CPC ...
Abstract
A photosensitive material for use in semiconductor manufacture comprises a copolymer that includes a plurality of photoresist chains and a plurality of hydrophobic chains, each hydrophobic chain attached to the end of one of the photoresist chains. The copolymer in response to externally applied energy will self-assemble to a photoresist layer and a hydrophobic layer.
Yeh, Hsiao-Wei. (2011). Material and method for photolithography (U.S. Patent No. 8029969). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8029969
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile