The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 04, 2011

Filed:

Sep. 01, 2005
Applicant:

Craig A. Hickman, Boise, ID (US);

Inventor:

Craig A. Hickman, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 1/00 (2006.01); G03F 9/00 (2006.01); G03C 5/00 (2006.01);
U.S. Cl.
CPC ...
Abstract

Methods, systems, and tool sets involving reticles and photolithography processing. Several embodiments of the invention are directed toward obtaining qualitative data from within the pattern area of a reticle that is indicative of the physical characteristics of the pattern area. Additional embodiments of the invention are directed toward obtaining qualitative data indicative of the physical characteristics of the reticle remotely from a photolithography tool. These two aspects of the invention can be combined in further embodiments in which qualitative data is obtained from within the pattern area of a reticle in a tool that is located remotely from the photolithography tool. As a result, several embodiments of methods and systems in accordance with the invention provide data taken from within the pattern area to more accurately reflect the contour of the pattern area of the reticle without using the photolithography tool to obtain such measurements. This is expected to provide more accurate data for correcting the photolithography tool to compensate for variances in the pattern area, and it is expected to increase throughput because the photolithography tool is not taken away from processing production wafers to measure the reticle.


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