The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2011
Filed:
Dec. 03, 2009
Jung-fang Chang, Tainan County, TW;
Te-chi Wong, Tainan County, TW;
Chien-te Hsieh, Taichung County, TW;
Chin-jen Huang, Kaohsiung, TW;
Yu-hung Chen, Taoyuan County, TW;
Jung-Fang Chang, Tainan County, TW;
Te-Chi Wong, Tainan County, TW;
Chien-Te Hsieh, Taichung County, TW;
Chin-Jen Huang, Kaohsiung, TW;
Yu-Hung Chen, Taoyuan County, TW;
Industrial Technology Research Institute, Hsin-Chu, TW;
Abstract
The prevent invention discloses a structure of thermal resistive layer and the method of forming the same. The thermal resistive structures, formed on a plastic substrate, comprises a porous layer, formed on said plastic substrate, including a plurality of oxides of hollow structure, and a buffer layer, formed on said porous layer, wherein said porous layer can protect said plastic substrate from damage caused by the heat generated during manufacturing process. With the structure and method disclosed above, making a thin film transistor and forming electronic devices on the plastic substrate in the technology of Low Temperature PolySilicon, i.e. LTPS, without changing any parameters is easy to carry out.