The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2011
Filed:
Jul. 09, 2008
Shi-yong Yi, Seongnam, KR;
Myeong-cheol Kim, Suwon, KR;
Dong-ki Yoon, Seoul, KR;
Kyung-yub Jeon, Yongin, KR;
Ji-hoon Cha, Seoul, KR;
Shi-Yong Yi, Seongnam, KR;
Myeong-Cheol Kim, Suwon, KR;
Dong-Ki Yoon, Seoul, KR;
Kyung-Yub Jeon, Yongin, KR;
Ji-Hoon Cha, Seoul, KR;
Samsung Electronics Co., Ltd., Suwon-si, KR;
Abstract
For patterning during integrated circuit fabrication, a first pattern of first masking structures is formed, and a buffer layer is formed on exposed surfaces of the first masking structures. Also, a second pattern of second masking structures is formed in recesses between the buffer layer at sidewalls of the first masking structures. Furthermore, the first and masking structures are formed from spin-coating respective high carbon containing materials. Such first and second masking structures pattern a target layer with higher pitch than possible with traditional photolithography.