The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2011
Filed:
Dec. 01, 2008
Bin LI, Chantilly, VA (US);
George Michael, High Point, NC (US);
Bin Li, Chantilly, VA (US);
George Michael, High Point, NC (US);
BAE Systems Information and Electronic Systems Integration Inc., Nashua, NH (US);
Ovonyx, Inc., Rochester Hills, MI (US);
Abstract
A write circuit for providing distinctive write currents to a chalcogenide memory cell is disclosed. The write circuit includes a current amplitude trim module, a current amplification and distribution module, and a write current shaping module. The current amplitude trim module provides a well-compensated current across a predetermined range of temperatures, voltage supplies and process corners intended for programming a chalcogenide memory cell. The current amplification and distribution module amplifies the well-compensated current in order to meet a programming requirement of the chalcogenide memory cell. The write current shaping module supplies an appropriate amount of write '0' current or write '1' current, based on the amplified current, to program the chalcogenide memory cell accordingly.