The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2011
Filed:
Aug. 31, 2009
Applicants:
Yoshiro Kabe, Amagasaki, JP;
Junichi Kitagawa, Amagasaki, JP;
Kikuo Yamabe, Tsukuba, JP;
Inventors:
Assignees:
Tokyo Electron Limited, Tokyo, JP;
University of Tsukuba, Tsukuba-shi, JP;
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/76 (2006.01);
U.S. Cl.
CPC ...
Abstract
To form a good quality silicon oxide film provided with both a superior Qbd characteristic and Rd characteristic, a wafer W is loaded into a plasma treatment apparatus where the surface of a silicon layerof the wafer W is treated by plasma oxidation to form on the silicon layerto a film thickness Ta silicon oxide film. Next, the wafer W on which the silicon oxide filmis formed is transferred to a thermal oxidation treatment apparatus where the silicon oxide filmis treated by thermal oxidation to thereby form a silicon oxide filmhaving a target film thickness T