The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2011
Filed:
Dec. 12, 2006
Gallium nitride based compound semiconductor light-emitting device and method for manufacturing same
Hironao Shinohara, Ichihara, JP;
Hiroshi Osawa, Chiba, JP;
Hironao Shinohara, Ichihara, JP;
Hiroshi Osawa, Chiba, JP;
Showa Denko K.K., Tokyo, JP;
Abstract
The present invention provides a gallium nitride based compound semiconductor light-emitting device having high light emission efficiency and a method of manufacturing the same. The gallium nitride based compound semiconductor light-emitting device includes: a substrate; an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layerthat are composed of gallium nitride based compound semiconductors and formed on the substratein this order; a transparent positive electrodethat is formed on the p-type semiconductor layer; a positive electrode bonding padthat is formed on the transparent positive electrode; a negative electrode bonding padthat is formed on the n-type semiconductor layer; and an uneven surface that has random convex portions formed thereon and is provided on at least a portion of the surfaceof the transparent positive electrode
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile