The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 27, 2011
Filed:
Jun. 30, 2006
Manfred Jurisch, Dresden, DE;
Stefan Eichler, Dresden, DE;
Thomas Bünger, Lüneburg, DE;
Berndt Weinert, Freiberg, DE;
Frank Börner, Dresden, DE;
Manfred Jurisch, Dresden, DE;
Stefan Eichler, Dresden, DE;
Thomas Bünger, Lüneburg, DE;
Berndt Weinert, Freiberg, DE;
Frank Börner, Dresden, DE;
Freiberger Compound Materials GmbH, Freiberg, DE;
Abstract
A device for heat treating (annealing) a III-V semiconductor wafer comprises at least one wafer support unit which is dimensioned such that a cover provided above the wafer surface is either spaced without any distance or with a distance of maximally about 2 mm to the wafer surface. A process for heat treating III-V semiconductor wafers having diameters larger than 100 mm and a dislocation density below 1×10cmis carried out in the device of the invention. SI GaAs wafers produced have an at least 25% increased characteristic fracture strength (Weibull distribution), an improved radial macroscopic and mesoscopic homogeneity and an improved quality of the mechano-chemically polished surface. The characteristic fracture strength is higher than 1900 MPa.